Model Number :
FGH60N60
Place of Origin :
original
Brand Name :
original
Price :
CN¥1.44/pieces
Description :
transistor, original
Operating Temperature :
-55°C ~ 150°C, -
Series :
FGH60
Type :
IGBT Transistor, Triode Transistor MOSFET
D/C :
23+
Package Type :
Throught Hole
Application :
General Purpose
Supplier Type :
Other
Media Available :
Other
Current - Collector (Ic) (Max) :
120A
Voltage - Collector Emitter Breakdown (max) :
-
Vce Saturation (Max) @ Ib, Ic :
-
Current - Collector Cutoff (Max) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Power - Max :
378W
Frequency - Transition :
-
Mounting Type :
Through Hole, Through Hole
Package / Case :
TO-247
Resistor - Base (R1) :
-
Resistor - Emitter Base (R2) :
-
FET Feature :
-
Drain to Source Voltage (Vdss) :
-
Current - Continuous Drain (Id) @ 25°C :
-
Rds On (Max) @ Id, Vgs :
-
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Frequency :
-
Current Rating (Amps) :
-
Noise Figure :
-
Power - Output :
-
Voltage - Rated :
-
Drive Voltage (Max Rds On, Min Rds On) :
-
Vgs (Max) :
-
IGBT Type :
Field Stop
Configuration :
-
Vce(on) (Max) @ Vge, Ic :
2.9V @ 15V, 60A
Input Capacitance (Cies) @ Vce :
-
Input :
-
NTC Thermistor :
-
Voltage - Breakdown (V(BR)GSS) :
-
Current - Drain (Idss) @ Vds (Vgs=0) :
-
Current Drain (Id) - Max :
-
Voltage - Cutoff (VGS off) @ Id :
-
Resistance - RDS(On) :
-
Voltage - Output :
-
Voltage - Offset (Vt) :
-
Current - Gate to Anode Leakage (Igao) :
-
Current - Valley (Iv) :
-
Current - Peak :
-
Transistor Type :
-
Part Number :
FGH60N60
Voltage-Collector Emitter Breakdown(Max) :
600V
Current-Collector Pulsed(Icm) :
180A
Switching Energy :
1.79mJ (on), 670uJ (off)
Supplier Device Package :
TO-247
Service :
One Stop Bom Service
Datasheet :
Please contact us!
Inverter :
Please contact us!
Warranty :
1-3 Years
Shipping by :
DHL\UPS\Fedex\EMS\HK Post
Voltage :
-
Applications :
-
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